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The Vishay 16TTS12 is a high-voltage phase control silicon controlled rectifier (SCR) from the 16TTS series, housed in a TO-220AB package. It features a maximum repetitive peak reverse voltage of 1200 V and an average on-state current rating of 10 A at a case temperature of 98 °C with 180° conduction. The device supports a non-repetitive surge current of up to 200 A under no voltage reapplied conditions. Key electrical characteristics include a maximum on-state voltage drop of 1.4 V at 10 A and 25 °C, a holding current of 100 mA, and a maximum gate trigger current of 60 mA at 25 °C. Operating junction temperatures range from -40 °C to 125 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead-free status or other variations. Confirm that the requested component matches the exact 16TTS12 designation for 1200 V ratings. Ensure compatibility with industrial level qualification requirements specified in the datasheet before finalizing procurement decisions.
Select this component for medium power phase control designs requiring 1200 V blocking capability. Evaluate thermal management needs based on the 1.3 °C/W junction-to-case thermal resistance. Consider the 10 A average current limit when designing for continuous sinusoidal waveforms. Verify gate drive parameters against the maximum DC gate trigger current specifications across the operating temperature range.
This SCR belongs to the 16TTS High Voltage Series manufactured by Vishay High Power Products. The series includes variants with different voltage codes, such as the 16TTS08 for 800 V applications. These devices are designed and qualified for industrial level environments, providing a standardized solution for high-voltage switching tasks within the same physical footprint family.
Consult the factory directly for higher voltage options up to 1600 V. No direct public substitute part numbers are listed in the provided documentation.
The 16TTS12 can withstand a peak half-sine wave on-state current of 200 A for a 10 ms pulse when no voltage is reapplied.
The maximum required DC gate current to trigger decreases as temperature increases, ranging from 90 mA at -65 °C to 35 mA at 125 °C.
The typical turn-off time (tq) is 110 µs at a junction temperature of 25 °C.