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The 2N2325 is a silicon controlled rectifier manufactured by Central Semiconductor Corp. It features a TO-205AD metal can package with through-hole mounting. The device supports an on-state RMS current of 1.6 A and offers a rated repetitive off-state voltage of 150 V. Key electrical parameters include a maximum gate trigger voltage of 800 mV and a maximum gate trigger current of 200 µA. The component utilizes a tin/lead terminal finish and is designed for standard recovery applications.
Verify the specific manufacturer designation, as multiple entities including Digitron Semiconductors may list this part number. Confirm that the tin/lead terminal finish matches project requirements. Ensure the TO-205AD metal can package dimensions align with existing board layouts. Cross-reference datasheets to confirm identical electrical specifications across different suppliers before procurement.
Select this component when a hermetically sealed metal can package is required for environmental protection. The low gate trigger current makes it suitable for sensitive control logic. Verify that the 150 V voltage rating meets the circuit's peak off-state requirements. Consider the physical size constraints of the TO-39-3 footprint during design integration.
This component belongs to the family of silicon controlled rectifiers produced by Central Semiconductor Corp. It is also referenced under similar part numbers by other manufacturers such as Digitron Semiconductors. The device represents a standard discrete thyristor solution available in traditional metal can packaging formats common in legacy and industrial electronics.
Digitron Semiconductors lists the 2N2325 in their catalog. Verify pinout compatibility and thermal characteristics when substituting between manufacturers. Ensure the replacement maintains the same TO-205AD mechanical outline.