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Product Detailed Parameters
- Description：N 200V, RD(MAX)<0.16@10V,VTH1.0V
- Series：TrenchFET®
- Mfr：Goford Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：847 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：65.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The Goford Semiconductor 18N20 is an N-channel enhancement mode power MOSFET utilizing advanced trench technology. It features a drain-source voltage (VDS) of 200 V and a continuous drain current (ID) of 18 A at 25°C case temperature. The device exhibits a maximum on-resistance (RDS(on)) of 190 mΩ at VGS = 10V and ID = 9A. It supports a pulsed drain current of 72 A and operates within a junction temperature range of -55°C to 150°C. The component is housed in a TO-252 package with a thermal resistance from junction-to-case of 1.9 °C/W.
Feature Summary
- Advanced trench technology providing low gate charge and excellent RDS(ON).
- 100% avalanche tested for enhanced reliability under transient conditions.
- RoHS compliant construction.
Applications
- Power switch applications
- DC/DC converters
Procurement Notes
Verify the specific ordering suffix against official documentation, as packaging quantities may vary by region or distributor. Confirm that the TO-252 package marking matches the required identification. Ensure compliance with RoHS standards if mandated by your project specifications. Cross-reference the datasheet revision number to validate parameter accuracy before finalizing procurement.
Selection Notes
Select this component for designs requiring a 200 V breakdown voltage and moderate current handling up to 18 A. The TO-252 package offers a balance between thermal performance and board space efficiency. Consider the 1.9 °C/W junction-to-case thermal resistance for heatsinking requirements. Verify that the gate charge characteristics align with the switching frequency and driver capabilities of the target circuit design.
Part Context
This part belongs to the Goford Semiconductor N-channel MOSFET portfolio, designed for general-purpose power switching. The manufacturer utilizes trench technology to optimize conduction losses and switching speeds. The TO-252 surface-mount package facilitates automated assembly and provides robust mechanical stability for industrial and consumer electronics applications.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum single pulse avalanche energy rating?
The 18N20 has a single pulse avalanche energy (EAS) rating of 90 mJ when tested at Tj=25°C, VDD=50V, VGS=10V, L=0.5mH, and Rg=25Ω.
Does the device include a body diode?
Yes, the 18N20 includes a Drain-Source Body Diode with a continuous reverse current rating of 18 A and a typical forward voltage of 1.2 V at ISD = 9A.
