1ED3120MC12HXUMA1

1ED3120MC12HXUMA1

$2.36
  • Description:DGTL ISO 8KV 1CH GT DVR DSO8-66
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:1ee670da2871 Category: Brand:

  
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Product Detailed Parameters

  • Description:DGTL ISO 8KV 1CH GT DVR DSO8-66
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:Magnetic Coupling
  • Number of Channels:1
  • Voltage - Isolation:8000Vpk
  • Propagation Delay tpLH / tpHL (Max):100ns, 100ns
  • Pulse Width Distortion (Max):-
  • Rise / Fall Time (Typ):30ns, 30ns (Max)
  • Current - Output High, Low:5.5A, 5.5A
  • Current - Peak Output:5.5A
  • Voltage - Forward (Vf) (Typ):-
  • Voltage - Output Supply:10V ~ 35V
  • Grade:-
  • Qualification:-
  • Operating Temperature:-40°C ~ 125°C
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package:PG-DSO-8-66
  • Common Mode Transient Immunity (Min):200kV/µs
  • Approval Agency:UL, VDE
  • Current - DC Forward (If) (Max):-

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1ED3120MC12HXUMA1

Overview

The 1ED3120MC12HXUMA1 is a single-channel isolated gate driver from Infineon's EiceDRIVER family, designed for high-voltage power switching applications. It features galvanic isolation with reinforced insulation capabilities and supports supply voltages ranging from 3.1 V to 17 V. The device provides independent output control with peak source and sink currents of 6 A and 6.5 A respectively. Key electrical parameters include a maximum propagation delay of 50 ns, with rise and fall times of 20 ns each. It operates within an extended temperature range of -40 °C to +125 °C and utilizes a PG-LDSO-8 surface-mount package.

Feature Summary

  • Provides galvanic isolation with reinforced insulation for safe operation in high-voltage environments
  • Features independent high-side and low-side outputs for precise control of power switches
  • Includes Miller clamp functionality to prevent unintended turn-on during high dv/dt events
  • Offers configurable UVLO thresholds to ensure stable operation under varying supply conditions

Applications

  • Silicon Carbide (SiC) MOSFET gate driving
  • Industrial motor drives
  • Solar energy systems
  • Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific ordering suffix to confirm the exact tape and reel quantity and moisture sensitivity level required for your assembly process. Ensure that the component meets the necessary regional regulatory standards such as RoHS compliance before finalizing procurement orders. Cross-reference the datasheet version to confirm the latest technical specifications and certification status.

Selection Notes

Select this component when a single-channel isolated driver with moderate current capability is required for SiC or IGBT applications. Consider the 20 ns switching speed and 6.5 A peak sink current for efficient power management. Evaluate the thermal performance and package constraints against your PCB layout requirements to ensure reliable operation within the specified temperature range.

Part Context

This part belongs to the 1ED-X3 Compact series, optimized for modern wide-bandgap semiconductors. It integrates advanced protection features and compact packaging to support high-density designs. The series emphasizes reliability and ease of use in industrial and renewable energy applications requiring robust isolation and fast switching performance.

Replacement Considerations

Direct replacements within the same family include parts with similar current ratings and isolation levels, such as the 1ED3123MC12H for higher current needs or the 1ED3131MC12H for slower switching applications. Verify pin compatibility and electrical parameters before substitution.

1ED3120MC12HXUMA11ED3120MC12HXUMA1
$2.36
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