1ED3123MU12HXUMA1

1ED3123MU12HXUMA1

$2.64
  • Description:DGT ISO 1.2KV 1CH GT DVR DSO8-66
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:0111ba7eb1e9 Category: Brand:

  
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Product Detailed Parameters

  • Description:DGT ISO 1.2KV 1CH GT DVR DSO8-66
  • Series:EiceDRIVER™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:Magnetic Coupling
  • Number of Channels:1
  • Voltage - Isolation:1200Vrms
  • Propagation Delay tpLH / tpHL (Max):-
  • Pulse Width Distortion (Max):-
  • Rise / Fall Time (Typ):15ns, 15ns
  • Current - Output High, Low:5.5A, 5.5A
  • Current - Peak Output:14A
  • Voltage - Forward (Vf) (Typ):-
  • Voltage - Output Supply:10V ~ 35V
  • Grade:-
  • Qualification:-
  • Operating Temperature:-40°C ~ 125°C
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package:PG-DSO-8-66
  • Common Mode Transient Immunity (Min):200kV/µs
  • Approval Agency:UL
  • Current - DC Forward (If) (Max):-

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1ED3123MU12HXUMA1

Overview

The Infineon Technologies 1ED3123MU12HXUMA1 is a single-channel isolated gate driver designed for IGBTs and SiC MOSFETs. It features a maximum output current of 5.5 A with rise and fall times of 15 ns. The device operates within a supply voltage range of 4.5 V to 18 V and supports an offset voltage of 2300 V. Propagation delay is specified at 90 ns, and it functions reliably across a temperature range of -40°C to +125°C.

Feature Summary

  • Integrated active Miller clamp function to prevent false turn-on during high dv/dt events
  • Built-in 800 V avalanche-protected bootstrap diode for simplified circuit design
  • Under-voltage lockout protection ensures safe operation by disabling outputs when supply voltage is insufficient

Applications

  • Gate driving for Silicon Carbide (SiC) MOSFETs in high-frequency power converters
  • Isolated control stages for Insulated Gate Bipolar Transistors (IGBTs)
  • High-voltage industrial motor drive systems requiring robust noise immunity

Procurement Notes

Verify the complete part number including the suffix HXUMA1 to ensure correct tape-and-reel packaging configuration. Confirm that the required isolation voltage rating of 2300 V aligns with your system's safety standards. Check for RoHS compliance documentation if environmental regulations apply to your manufacturing process.

Selection Notes

Select this component when a single-channel driver with high common-mode transient immunity is required. The integrated bootstrap diode reduces external component count compared to drivers lacking this feature. Ensure the 5.5 A peak current capability matches the gate charge requirements of the target power switch.

Part Context

This device belongs to the EiceDRIVER family from Infineon Technologies. It utilizes digital isolation technology to provide galvanic separation between control logic and power stages. The DSO-8 package allows for compact surface-mount implementation in space-constrained power electronics designs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.

1ED3123MU12HXUMA11ED3123MU12HXUMA1
$2.64
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