SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Infineon Technologies 1ED3123MU12HXUMA1 is a single-channel isolated gate driver designed for IGBTs and SiC MOSFETs. It features a maximum output current of 5.5 A with rise and fall times of 15 ns. The device operates within a supply voltage range of 4.5 V to 18 V and supports an offset voltage of 2300 V. Propagation delay is specified at 90 ns, and it functions reliably across a temperature range of -40°C to +125°C.
Verify the complete part number including the suffix HXUMA1 to ensure correct tape-and-reel packaging configuration. Confirm that the required isolation voltage rating of 2300 V aligns with your system's safety standards. Check for RoHS compliance documentation if environmental regulations apply to your manufacturing process.
Select this component when a single-channel driver with high common-mode transient immunity is required. The integrated bootstrap diode reduces external component count compared to drivers lacking this feature. Ensure the 5.5 A peak current capability matches the gate charge requirements of the target power switch.
This device belongs to the EiceDRIVER family from Infineon Technologies. It utilizes digital isolation technology to provide galvanic separation between control logic and power stages. The DSO-8 package allows for compact surface-mount implementation in space-constrained power electronics designs.
Publicly confirmed substitute part numbers are not available in the provided source material.