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The Infineon Technologies 1EDC30I12MHXUMA1 is a high-side isolated gate driver from the EiceDRIVER family, designed for IGBT and MOSFET applications. It features a single channel with an output current of 3 A. The device operates within a supply voltage range of 3.1 V to 17 V and utilizes a DSO-8-59 package. Key electrical parameters include a rise time of 10 ns. The component supports inverting and non-inverting configurations and includes Miller clamp functionality.
Verify the lifecycle status before procurement as this component may be marked as not recommended for new designs. Confirm that the DSO-8-59 package dimensions align with the target PCB footprint. Ensure the 3 A output current meets the load requirements. Check for RoHS compliance documentation if required by specific manufacturing standards. Validate the operating temperature range against environmental conditions.
Select this driver when a single-channel high-side solution with integrated Miller clamping is required. The 3 A peak current is suitable for medium-power IGBTs and MOSFETs. Consider the DSO-8-59 package for space-constrained designs. Verify that the 3.1 V to 17 V supply range matches the available auxiliary power rails. Evaluate the 10 ns rise time against electromagnetic interference constraints.
This part belongs to the Infineon EiceDRIVER series, which focuses on isolated gate drivers for power semiconductors. The 1EDC30I12MHXUMA1 specifically targets high-side applications where galvanic isolation is necessary. It is part of a broader portfolio designed to enhance efficiency and reliability in power electronics systems.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon documentation or distributor databases for cross-reference information.