SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Infineon Technologies 1EDI60I12AFXUMA1 is a high-voltage, single-channel isolated gate driver IC from the EiceDRIVER™ Compact family. It features galvanic isolation for functional safety and supports IGBTs and SiC MOSFETs up to 1200 V. The device provides a peak output current of 9.4 A with independent source and sink capabilities. It operates within an input supply voltage range of 3.1 V to 17 V and includes integrated protection against undervoltage lockout (UVLO) and short-circuit events. Designed for industrial applications, it ensures reliable switching performance in demanding power electronics environments.
Verify the complete part number including the suffix to ensure correct packaging configuration. Confirm that the specific revision matches the required datasheet version for design-in compatibility. Check for RoHS compliance status as indicated in official documentation. Ensure proper handling procedures are followed due to moisture sensitivity classification. Validate supplier authorization to guarantee genuine component sourcing.
Select this component when a single-channel isolated driver with high peak current is required for 1200 V semiconductors. Consider the DSO-8 package size for space-constrained PCB layouts. Evaluate the propagation delay characteristics against system timing requirements. Assess the thermal resistance parameters for adequate heat dissipation in the target enclosure. Compare alternative options within the EiceDRIVER Compact family for cost or feature optimization.
This device belongs to the EiceDRIVER™ Compact series, designed for high-performance and cost-efficient gate driving solutions. It complements Infineon's portfolio of discrete IGBTs and CoolSiC™ MOSFETs by providing specialized drive signals. The compact form factor allows integration into modern power modules and inverters where board space is limited but reliability standards remain high.
Consult official substitution lists for direct replacements. Verify pin-to-pin compatibility and electrical parameter equivalence before implementation.