1N412B

Single Diodes Overview

The Microchip Technology 1N412B is a standard single rectifier diode designed for high-current applications. It features a maximum DC reverse voltage (Vr) of 100 V and an average rectified current (Io) of 100 A. The device utilizes a DO-205AA (DO-8) terminal mount package. Key electrical characteristics include a forward voltage of 1.2 V at 200 A and a reverse leakage current of 50 µA at 100 V. It operates within a junction temperature range of -65°C to 200°C and exhibits a standard recovery speed exceeding 500 ns.

Single Diodes Feature Summary

• High current handling capability with a 100 A average rectified current rating
• Robust thermal performance supporting junction temperatures up to 200°C
• Terminal mount construction in a DO-205AA (DO-8) package for secure installation

Single Diodes Applications

• Industrial power supply rectification
• Battery charging circuits
• Welding equipment power stages

Single Diodes Procurement Notes

Verify the specific datasheet version, as Microchip may update specifications over time. Confirm that the DO-205AA terminal mount style matches the mechanical design requirements. Ensure the application environment stays within the specified -65°C to 200°C junction temperature limits. Check for any RoHS compliance status if required by the end product regulations.

Single Diodes Selection Notes

Select this component when a standard recovery diode with high surge and continuous current capacity is needed. The 100 V reverse voltage rating suits low-voltage AC-to-DC conversion. Consider the terminal mount package for applications requiring robust mechanical fixation rather than surface mounting. Evaluate the 500 ns recovery time against switching frequency requirements.

Single Diodes Part Context

The 1N412B belongs to the general-purpose power rectifier category from Microchip Technology. It is part of a legacy series often used in industrial and automotive environments where reliability under high stress is critical. The DO-205AA package provides a standardized footprint for through-hole or stud-mount implementations in power electronics designs.