Single Diodes 1N4150 product image

1N4150

  • Description:DIODE STANDARD 50V 200MA DO35
  • Series:-
  • Mfr:onsemi
  • Package:Bulk

SKU:705fee8d021b Category: Brand:

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1N4150 is listed in the Single Diodes range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE STANDARD 50V 200MA DO35. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for 1N4150

  • Description:DIODE STANDARD 50V 200MA DO35
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io):200mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 200 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):6 ns
  • Current - Reverse Leakage @ Vr:100 nA @ 50 V
  • Capacitance @ Vr, F:2.5pF @ 0V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:DO-204AH, DO-35, Axial
  • Supplier Device Package:DO-35
  • Operating Temperature - Junction:175°C (Max)
  • Grade:-
  • Qualification:-

Single Diodes datasheet and documents for 1N4150

1N4150

Single Diodes Overview

The onsemi 1N4150 is a high conductance ultra fast diode sourced from Process 1R. It features a working inverse voltage of 50 V and an average rectified current of 200 mA. The device supports a DC forward current of 400 mA and a peak forward surge current of 4.0 A for one microsecond pulses. Electrical characteristics include a breakdown voltage of 75 V at 5.0 μA reverse current, a maximum reverse current of 100 nA at 50 V, and a diode capacitance of 2.5 pF. Reverse recovery time ranges from 4.0 to 6.0 ns depending on current levels.

Single Diodes Feature Summary

  • Ultra-fast switching performance with low reverse recovery times suitable for high-speed applications
  • High conductance design utilizing Process 1R technology for efficient power handling
  • Robust surge current capability supporting transient load conditions

Single Diodes Applications

  • High speed switching circuits
  • General purpose rectification in signal processing
  • Fast recovery applications requiring low reverse charge

Single Diodes Procurement Notes

Verify the specific manufacturer source when ordering, as the 1N4150 designation is utilized by multiple vendors including Fairchild (onsemi), Vishay, and others. Confirm package availability, as the component exists in both DO-35 through-hole and LL-34 surface mount configurations. Ensure the datasheet matches the required electrical tolerances for your specific circuit design before finalizing procurement.

Single Diodes Selection Notes

Select this component for designs requiring fast recovery characteristics combined with moderate current handling capabilities. The 50 V rating suits low voltage signal switching environments. Consider thermal derating requirements above 25°C due to the specified junction-to-ambient thermal resistance. Verify that the chosen package variant aligns with the board layout constraints and mounting technology available.

Single Diodes Part Context

This component belongs to the family of silicon epitaxial planar switching diodes designed for general-purpose high-speed applications. It serves as a standard replacement for legacy glass-passivated switching diodes in various electronic assemblies. The part is widely recognized for its reliability in consumer electronics and industrial control systems where fast turn-off speeds are critical.

Single Diodes Replacement Considerations

Direct substitutes include the FDLL4150 which shares identical electrical specifications but utilizes the LL-34 surface mount package. Other equivalents within the same voltage and current class should be evaluated based on reverse recovery time and forward voltage drop compatibility.

1N41501N4150

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