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1N4305-1E3
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Product Detailed Parameters
- Description：DIODE STANDARD 50V 200MA DO204AH
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：50 V
- Current - Average Rectified (Io)：200mA
- Voltage - Forward (Vf) (Max) @ If：850 mV @ 10 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：2 ns
- Current - Reverse Leakage @ Vr：100 nA @ 50 V
- Capacitance @ Vr, F：-
- Mounting Type：Through Hole
- Package / Case：DO-204AH, DO-35, Axial
- Supplier Device Package：DO-204AH (DO-35)
- Operating Temperature - Junction：-65°C ~ 150°C
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Overview
The Microchip Technology 1N4305-1E3 is a small signal switching diode designed for high-speed applications. It features a peak reverse voltage of 75 V and a maximum forward current of 10 mA. The device exhibits a fast recovery time of 2 ns with a maximum reverse current of 100 nA. Operating within a temperature range of -65°C to +150°C, it utilizes a DO-35-2 through-hole package. Key electrical characteristics include a forward voltage of 850 mV, a maximum surge current of 500 mA, and a maximum diode capacitance of 2 pF.
Feature Summary
- High-speed switching capability with 2 ns recovery time
- Wide operating temperature range from -65°C to +150°C
- Low leakage current of 100 nA
Applications
- Signal or computer diode circuits
- High-speed switching applications
- General purpose rectification in low current environments
Procurement Notes
Verify the specific suffix 'TR' if reel packaging is required, as standard datasheets may list bulk options. Confirm RoHS compliance status directly with the manufacturer documentation. Ensure the DO-35-2 through-hole package matches your PCB footprint requirements. Cross-reference the exact part number against official Microchip databases to confirm current production status and availability constraints.
Selection Notes
Select this component for designs requiring fast switching speeds and low capacitance. The 75 V reverse voltage rating suits low-voltage signal processing tasks. Consider the 10 mA forward current limit when sizing circuit components. The wide temperature range supports operation in harsh industrial or automotive environments where standard silicon limits might be exceeded.
Part Context
This part belongs to the Microchip Technology diode portfolio, specifically categorized under small signal switching diodes. It is part of the legacy 1N series adapted for modern manufacturing standards. The product falls under the broader category of discrete semiconductors used for signal conditioning and protection in electronic circuits.
Replacement Considerations
Consult official Microchip substitution guides for verified equivalents. Generic replacements must match the 75 V PIV, 2 ns recovery time, and DO-35-2 package dimensions. Verify that alternative parts maintain the same 100 nA reverse leakage specification.
