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Product Detailed Parameters
- Description:DIODE STD 100V 150MA DO204AH
- Series:-
- Mfr:Vishay General Semiconductor - Diodes Division
- Package:Tape & Reel (TR),Cut Tape (CT)
- Technology:Standard
- Voltage - DC Reverse (Vr) (Max):100 V
- Current - Average Rectified (Io):150mA
- Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
- Speed:Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):8 ns
- Current - Reverse Leakage @ Vr:5 µA @ 75 V
- Capacitance @ Vr, F:4pF @ 0V, 1MHz
- Mounting Type:Through Hole
- Package / Case:DO-204AH, DO-35, Axial
- Supplier Device Package:DO-204AH (DO-35)
- Operating Temperature - Junction:175°C (Max)
- Grade:-
- Qualification:-
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Overview
The Vishay General Semiconductor - Diodes Division 1N4448TR is a silicon epitaxial planar diode housed in the DO-35 (DO-204AH) axial through-hole package. It features a maximum repetitive peak reverse voltage of 100 V and a continuous forward current rating of 300 mA. The device exhibits a typical forward voltage of 720 mV at 5 mA and a reverse leakage current of 5 µA at 75 V. Electrical performance includes a reverse recovery time of 8 ns under standard test conditions, with a junction temperature range extending up to 175 °C.
Feature Summary
- Utilizes silicon epitaxial planar technology for robust switching performance
- Designed for extreme fast switching applications within small signal circuits
- Provides high thermal stability with a maximum junction temperature of 175 °C
Applications
- Extreme fast switches
- General purpose rectification
- High-speed logic interface protection
Procurement Notes
Verify that the specific ordering code matches the required packaging configuration. The TR suffix indicates availability on a 14-inch reel containing 10,000 units per reel, or 50,000 units per box. Confirm compliance requirements against the material categorization definitions provided in the official documentation before finalizing procurement specifications.
Selection Notes
Select this component when a standard small-signal switching diode with an axial leaded package is required. The 1N4448TR offers a balance of low capacitance and fast recovery characteristics suitable for general-purpose digital and analog signal processing. Ensure the circuit design accommodates the specified peak forward surge current limits and thermal dissipation constraints.
Part Context
This part belongs to the 1N4448 series of small signal fast switching diodes manufactured by Vishay Semiconductors. The series is characterized by its silicon epitaxial planar construction and standardized DO-35 mechanical housing. The product line serves as a fundamental discrete semiconductor solution for high-frequency signal handling and rectification tasks across various electronic assemblies.
Replacement Considerations
Direct substitutes include the 1N4448TAP variant from the same manufacturer family, which shares identical electrical parameters but utilizes ammopack packaging instead of reel tape.
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