1N457_T50R

Overview

The onsemi 1N457_T50R is a small signal switching diode designed for general-purpose applications. It features a DO-35 through-hole package and operates with a peak reverse voltage of 70 V. The device supports a forward current of 200 mA and handles a maximum surge current of 4 A. Electrical characteristics include a forward voltage of 1 V and a reverse leakage current of 25 nA. It functions within a temperature range from -65 C to +175 C.

Feature Summary

• High conductance performance for efficient signal switching
• Low leakage current capability for improved circuit isolation
• Robust thermal stability across extended operating temperatures

Applications

• General purpose rectification circuits
• Small signal switching applications
• Protection against transient voltages in low-power systems

Procurement Notes

Verify the specific suffix T50R to confirm the cut tape packaging format, as standard bulk packaging may differ. Ensure the component matches the onsemi manufacturer identification rather than other vendors using similar JEDEC numbers. Confirm RoHS compliance status directly from the official datasheet before integration into regulated assemblies.

Selection Notes

Select this component when a small signal diode requires high conductance combined with low leakage characteristics. The DO-35 package suits through-hole designs needing moderate current handling up to 200 mA. Consider the wide temperature range if the application involves extreme environmental conditions or high thermal loads.

Part Context

This part belongs to the 1N457 series of silicon planar junction switching diodes manufactured by onsemi. The series is characterized by its high conductance and low leakage properties, making it suitable for various electronic applications requiring reliable switching performance in a compact axial leaded package.