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1N4588
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Product Detailed Parameters
- Description：DIODE STANDARD 200V 150A DO205AA
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io)：150A
- Voltage - Forward (Vf) (Max) @ If：1.5 V @ 150 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：9.5 mA @ 200 V
- Capacitance @ Vr, F：-
- Mounting Type：Chassis, Stud Mount
- Package / Case：DO-205AA, DO-8, Stud
- Supplier Device Package：DO-205AA (DO-8)
- Operating Temperature - Junction：-60°C ~ 200°C
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor 1N4588 is a silicon standard recovery diode designed for high-power applications. It features a repetitive peak reverse voltage of 200 V and supports a continuous forward current of 150 A at a case temperature of 25 °C. The device operates within a junction temperature range of -55 to 150 °C and includes a surge non-repetitive forward current capability of 3000 A for half-sine wave pulses. It utilizes a DO-8 (DO-205AA) stud package with a thermal resistance from junction to case of 0.35 °C/W.
Feature Summary
- High surge current capability for robust transient handling
- Standard polarity configuration with the stud serving as the cathode terminal
- Not sensitive to electrostatic discharge events
Applications
- Industrial power conversion systems
- Motor drive rectification circuits
- General-purpose high-current rectification
Procurement Notes
Verify the specific ordering suffix against the manufacturer's documentation to confirm terminal configuration. Standard versions feature a cathode stud, while reversed polarity variants possess an anode stud. Ensure the selected part matches the required mounting orientation and electrical specifications for the target circuit design before finalizing procurement.
Selection Notes
Select this component based on its 200 V blocking voltage and 150 A continuous current rating. Evaluate the thermal management requirements using the specified 0.35 °C/W junction-to-case thermal resistance. Confirm that the operating environment stays within the -55 to 150 °C junction temperature limits and that the mechanical fit aligns with the DO-8 package dimensions.
Part Context
This component belongs to the 1N4588(R) through 1N4593(R) series of silicon standard recovery diodes. The series covers voltage ratings from 200 V to 800 V, sharing identical physical packaging and thermal characteristics. The 'R' designation indicates a reversed polarity variant where the stud functions as the anode instead of the cathode.
Replacement Considerations
Direct substitutes include other 1N4588 units from different manufacturers meeting the same DO-8 stud specifications. Verify that any replacement maintains the 200 V VRRM, 150 A IF rating, and compatible thermal resistance values.
