1N4590

1N4590

$25.21
  • Description:DIODE STANDARD 400V 150A DO205AA
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk

SKU:0f5d7ae97470 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE STANDARD 400V 150A DO205AA
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):400 V
  • Current - Average Rectified (Io):150A
  • Voltage - Forward (Vf) (Max) @ If:1.5 V @ 150 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:9 mA @ 400 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Chassis, Stud Mount
  • Package / Case:DO-205AA, DO-8, Stud
  • Supplier Device Package:DO-205AA (DO-8)
  • Operating Temperature - Junction:-60°C ~ 200°C
  • Grade:-
  • Qualification:-

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1N4590

Overview

The GeneSiC Semiconductor 1N4590 is a silicon standard recovery rectifier housed in a DO-8 stud mount package. It features a repetitive peak reverse voltage of 400 V and a continuous forward current rating of 150 A at a case temperature of 25 °C. The device supports a non-repetitive surge forward current of 3000 A for half-sine wave pulses. Electrical characteristics include a maximum forward voltage of 1.5 V at 150 A and a thermal resistance from junction to case of 0.35 °C/W. The component operates within a junction temperature range of -55 °C to 150 °C.

Feature Summary

  • High surge capability with a rated non-repetitive forward current of 3000 A
  • Not sensitive to electrostatic discharge (ESD)
  • Standard polarity configuration where the stud serves as the cathode

Applications

  • Industrial power conversion systems
  • General purpose rectification in high current circuits
  • Power supply units requiring robust surge handling

Procurement Notes

Verify the specific part marking against the datasheet to confirm the 400 V reverse voltage rating, as this series spans multiple voltage levels. Ensure the mounting surface preparation meets the thermal interface requirements for the specified 0.35 °C/W junction-to-case thermal resistance. Confirm that the stud polarity matches the circuit design, noting that standard versions have the stud as the cathode.

Selection Notes

Select the 1N4590 when a 400 V blocking voltage is required alongside a 150 A continuous current capacity. This component is suitable for applications demanding high surge tolerance up to 3000 A. Consider the DO-8 package dimensions and stud mounting style for mechanical integration. Evaluate the thermal management strategy to maintain the junction temperature within the -55 °C to 150 °C operating range under load.

Part Context

This component belongs to the 1N4588(R) through 1N4593(R) series of silicon standard recovery diodes manufactured by GeneSiC Semiconductor. All devices in this family share identical physical dimensions, thermal characteristics, and current ratings, differing only in their repetitive peak reverse voltage ratings which range from 200 V to 800 V. The 1N4590 specifically provides the 400 V variant within this standardized lineup.

Replacement Considerations

Direct substitutes within the same series include the 1N4588R and 1N4591R, provided the system voltage does not exceed their respective ratings. Verify that any replacement maintains the 150 A current capacity and compatible thermal resistance.

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