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1N4593R
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Product Detailed Parameters
- Description：DIODE STD REV 800V 150A DO205AA
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Technology：Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max)：800 V
- Current - Average Rectified (Io)：150A
- Voltage - Forward (Vf) (Max) @ If：1.5 V @ 150 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：5.5 mA @ 800 V
- Capacitance @ Vr, F：-
- Mounting Type：Chassis, Stud Mount
- Package / Case：DO-205AA, DO-8, Stud
- Supplier Device Package：DO-205AA (DO-8)
- Operating Temperature - Junction：-60°C ~ 200°C
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor 1N4593R is a silicon standard recovery rectifier housed in a DO-8 package. It features a repetitive peak reverse voltage of 600 V and a continuous forward current rating of 150 A at a case temperature of 25 °C. The device supports a surge non-repetitive forward current of 3000 A for half-sine wave pulses lasting 8.3 ms. Maximum operating and storage temperatures range from -55 °C to +150 °C. The junction-to-case thermal resistance is 0.35 °C/W, with a maximum forward voltage of 1.5 V.
Feature Summary
- High surge current capability for robust transient handling
- Not sensitive to electrostatic discharge events
- Standard polarity configuration with stud as cathode
Applications
- Industrial power conversion systems
- General purpose rectification in high-current circuits
- Power supply input stages requiring high voltage blocking
Procurement Notes
Verify the specific suffix designation against official documentation to confirm terminal orientation. The 'R' variant indicates reversed polarity where the stud functions as the anode rather than the cathode. Confirm mounting hardware compatibility with the DO-8 package dimensions prior to integration into the final assembly design.
Selection Notes
Select this component when a 600 V blocking voltage and 150 A continuous current are required in a stud-mount form factor. Ensure the application maintains the case temperature within limits to sustain the rated current. Consider the 0.35 °C/W thermal resistance for heatsink sizing calculations to maintain junction temperatures below the maximum limit during operation.
Part Context
This device belongs to the 1N4588(R) through 1N4593(R) series of silicon standard recovery diodes manufactured by GeneSiC Semiconductor. The series covers reverse voltage ratings from 200 V to 800 V while maintaining consistent current and thermal characteristics across the lineup. These components are designed for high-power applications utilizing the DO-8 package style.
Replacement Considerations
Compatible substitutes include other 1N4593 or 1N4593R equivalents from different manufacturers that match the 600 V reverse voltage, 150 A forward current, and DO-8 package outline. Verify pinout and stud polarity alignment before substitution.
