1N4935G-K

1N4935G-K

$0.03
  • Description:DIODE STANDARD 200V 1A DO204AL
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tape & Reel (TR)

SKU:eb4321728a74 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE STANDARD 200V 1A DO204AL
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tape & Reel (TR)
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io):1A
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 1 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):200 ns
  • Current - Reverse Leakage @ Vr:5 µA @ 200 V
  • Capacitance @ Vr, F:10pF @ 4V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:DO-204AL, DO-41, Axial
  • Supplier Device Package:DO-204AL (DO-41)
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Grade:-
  • Qualification:-

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1N4935G-K

Overview

The 1N4935G-K is a glass-passivated silicon rectifier diode manufactured by Taiwan Semiconductor Corporation. It features a single-phase, half-wave configuration with a maximum average forward rectified current of 1 A and a maximum repetitive peak reverse voltage of 200 V. The device utilizes a DO-41 axial leaded plastic package. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 30 A, a maximum DC reverse voltage rating of 200 V, and a maximum RMS voltage of 140 V. The junction temperature range extends from -55 °C to +150 °C, with a maximum operating temperature of 150 °C.

Feature Summary

  • Glass passivation protects the junction against mechanical stress and moisture
  • Metalurgically bonded construction ensures high reliability
  • Low leakage current for efficient operation
  • Fast switching capability suitable for general-purpose applications

Applications

  • General purpose rectification in printed circuit boards
  • Reverse polarity protection circuits
  • DC power supply output rectification
  • Freewheeling diodes in inductive load circuits

Procurement Notes

Verify the specific suffix 'K' against the manufacturer's official datasheet to confirm if it denotes a specific tape-and-reel packaging variant or a distinct qualification level compared to the standard 1N4935G. Ensure the component matches the required RoHS compliance status and humidity sensitivity classification for your assembly process. Cross-reference the ordering number with Taiwan Semiconductor's current product release notes to avoid obsolete stock.

Selection Notes

Select this component when a 1 A fast recovery rectifier with a 200 V blocking voltage is required in an axial leaded package. It serves as a direct replacement for standard 1N4935 specifications. Consider the thermal resistance and derating curves for capacitive loads where current must be reduced by 20%. Ensure the application environment stays within the specified -55 °C to +150 °C junction temperature range.

Part Context

This part belongs to the LL4933G through LL4937G series of glass-passivated silicon rectifiers produced by Taiwan Semiconductor. These components are designed for reliable low-cost construction using molded plastic techniques. The series offers various voltage ratings from 50 V to 600 V, sharing common mechanical data such as solderability per MIL-STD-750 and UL flammability classification 94V-0 for the plastic package.

Replacement Considerations

Direct substitutes include the Vishay 1N4935G and MCC 1N4935GP. Other equivalent parts from manufacturers like Good-Ark or Sangdest Microelectronics may also be used provided they meet the identical 1 A, 200 V, DO-41 package specifications.

1N4935G-K1N4935G-K
$0.03
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