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The Central Semiconductor Corp 1N5285 TR PBFREE is a silicon field effect current regulator diode housed in a DO-35 axial package. It provides a nominal regulator current (IP) of 0.27 mA at a test voltage (VT) of 25 V, with a minimum of 0.230 mA and a maximum of 0.311 mA. The device supports a peak operating voltage of 100 V and dissipates up to 600 mW. Electrical characteristics include a minimum dynamic impedance (ZT) of 14 MΩ and a minimum knee impedance (ZK) of 1.95 MΩ at specified conditions. The maximum limiting voltage (VL) is 1.0 V when the load current is 0.8 times the minimum IP.
Verify that the ordering suffix matches the required plating specification. The PBFREE designation indicates lead-free plating compliance. Confirm the specific part number against the manufacturer's official documentation to ensure correct electrical parameters and package type are selected for the intended application.
Select this component based on the required nominal current of 0.27 mA and the 100 V peak operating voltage limit. Ensure the circuit design accommodates the specified dynamic and knee impedances. Verify that the DO-35 through-hole package aligns with the board layout requirements and that the 600 mW power dissipation rating is sufficient for the operating environment.
This device belongs to the 1N5283 through 1N5314 series of silicon current limiting diodes produced by Central Semiconductor Corp. The series utilizes a cost-effective DO-35 case to provide consistent performance. The 1N5285 variant specifically targets applications needing a low milliamperes current regulation level within this broader product family.
Consult the manufacturer datasheet for parameter-equivalent alternatives from other vendors. Cross-referencing requires matching the nominal current, voltage ratings, and package dimensions to ensure functional compatibility without redesigning the host circuitry.
The maximum limiting voltage (VL) is 1.0 V when measured at a load current equal to 0.8 times the minimum regulator current.
The pulse width in milliseconds is calculated by dividing 27.5 by the nominal regulator current (IP NOM) in milliamperes.
The operating and storage junction temperature range extends from -65°C to +200°C.