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The 1N5295 TR PBFREE is a silicon current regulator diode manufactured by Central Semiconductor Corp. It provides a constant current output of 902 µA with a maximum limiting voltage of 1.25 V and a peak operating voltage rating of 100 V. The device dissipates up to 475 mW and operates within a temperature range of -55°C to +175°C. Packaged in the DO-7-2 through-hole format, it features a minimum dynamic impedance of 1 MΩ and a minimum knee impedance for stable regulation.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and tape/reel specifications. Ensure the component meets RoHS compliance requirements if mandated by the design. Cross-reference the datasheet electrical characteristics with the application circuit parameters before finalizing procurement.
Select this component when a precise microampere-level current source is required in a through-hole configuration. Verify that the 100 V peak voltage rating accommodates the maximum potential difference in the circuit. Confirm that the 475 mW power dissipation capability is sufficient for the intended thermal environment.
This part belongs to the 1N529x series of current regulator diodes produced by Central Semiconductor. These devices utilize JFET-based technology to provide simple, two-terminal constant current solutions. The series offers various current values to suit different low-power electronic applications requiring stable current flow without complex active components.
Consult the manufacturer's cross-reference data for verified equivalents. Ensure any substitute maintains the 902 µA regulation current and compatible voltage ratings.