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The 1N5298 TR TIN/LEAD is a silicon current regulator diode manufactured by Central Semiconductor Corp. It provides a stable regulated current of 1.21 mA with a maximum power dissipation of 500 mW and a breakdown voltage of 100 V. The component utilizes a DO-35 axial through-hole glass package, suitable for bulk or tape-and-reel mounting. It operates within a junction temperature range of -65°C to +200°C and complies with RoHS 3 standards.
Verify the specific ordering suffix against the manufacturer's datasheet to confirm lead-free status and packaging format. Ensure the selected variant matches the required current tolerance and package style for your assembly process. Cross-reference the DigiKey part number to confirm availability and standard lead times before finalizing procurement plans.
Select this component when a simple, two-terminal current regulation solution is required without active control loops. Verify that the 1.21 mA nominal current aligns with the target circuit requirements. Confirm that the 100 V breakdown voltage exceeds the maximum potential drop across the device in the intended application.
This part belongs to the 1N5298 series of current regulator diodes produced by Central Semiconductor. These devices are designed as direct replacements for traditional JFET-based current sources, offering improved stability and wider operating temperature ranges in compact axial packages.
Publicly confirmed parameter-equivalent substitutes include the 1N5298RL/TR from Microchip Technology. Verify pinout compatibility and electrical tolerances before substituting.