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The JAN1N5303-1/TR is a current regulator diode manufactured by Microchip Technology, designed for through-hole mounting in the DO-7 axial package. It provides a maximum regulator current of 1.76 mA and supports a peak operating voltage of 100 V with a power dissipation rating of 475 mW to 500 mW. The device operates within a junction temperature range of -65°C to +175°C and complies with MIL-PRF-19500/463 military specifications. This component serves as a stable constant-current source for electronic circuits requiring precise current limiting.
Verify the specific suffix against official Microchip documentation to confirm packaging configuration. Ensure the procurement channel provides valid traceability for military-grade components. Confirm that the delivered units match the JAN prefix requirements for radiation hardness and quality assurance standards specified in the datasheet.
Select this component when a fixed current sink is required without external feedback loops. Verify that the load impedance allows sufficient voltage drop for regulation while staying within the 100 V limit. Consider thermal management strategies to ensure power dissipation remains below the maximum rated value during continuous operation.
This part belongs to the 1N5303 family of current regulator diodes produced by Microchip Technology under its Microsemi division. The JAN prefix indicates compliance with military performance standards, distinguishing it from commercial variants. The /TR suffix denotes tape and reel packaging for automated assembly processes.
Direct substitutes include other JAN1N5303 variants or equivalent current regulator diodes with matching 1.76 mA regulation characteristics. Verify pinout compatibility and package dimensions before substitution. Ensure replacement parts meet the same MIL-PRF-19500/463 qualification if military reliability is required.