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The Central Semiconductor Corp 1N5307 BK PBFREE is a silicon rectifier diode designed for general-purpose applications. It features an axial leaded DO-41 package and supports a maximum average forward rectified current of 1.5 A. The device provides a repetitive peak reverse voltage of 200 V and a non-repetitive peak forward surge current capability of 30 A. Operating within a temperature range from -65°C to +175°C, it exhibits a maximum DC reverse leakage current of 5 µA at rated voltage and a low forward voltage drop of 1.1 V at full load.
Verify the specific ordering suffix against manufacturer documentation to confirm compliance with RoHS directives and halogen-free status. Confirm that the component meets all required electrical specifications for the target application environment before finalizing procurement decisions.
Select this component when a standard 1.5 A rectifier with 200 V reverse voltage rating is required. Ensure the circuit design accommodates the specified forward voltage drop and reverse leakage characteristics. Verify that the DO-41 package size fits the available PCB real estate and thermal management requirements.
This part belongs to the 1N series of silicon rectifiers manufactured by Central Semiconductor Corp. It serves as a direct replacement for legacy 1N5307 components while offering modern manufacturing standards. The series is widely used in industrial and consumer electronics requiring reliable AC-to-DC conversion.
The maximum forward voltage drop is 1.1 V at 1.5 A.
The repetitive peak reverse voltage (VRRM) is 200 V.
The maximum operating junction temperature is +175°C.