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The Central Semiconductor Corp 1N5311 TR PBFREE is a silicon rectifier diode designed for general-purpose applications. It features a glass passivated junction and utilizes an axial leaded DO-201AH package. The device provides a maximum average forward rectified current of 1.5 amperes at a case temperature of 75°C. Its peak repetitive reverse voltage rating is specified at 100 volts, with a non-repetitive peak surge current capability of 40 amperes for half-sine wave pulses lasting 8.3 milliseconds. The component operates within a junction temperature range of -65°C to +175°C.
Verify the specific manufacturer datasheet for the 1N5311 TR PBFREE to confirm exact electrical tolerances and thermal characteristics before integration. Ensure that the DO-201AH package dimensions match the target PCB footprint requirements. Cross-reference the suffix 'TR' to confirm tape-and-reel packaging specifications if automated assembly is required. Validate compliance with RoHS directives as indicated by the 'PBFREE' designation.
Select this component when a standard 1.5A rectifier with a 100V reverse voltage rating is required. Consider the DO-201AH package size constraints and the operating temperature range up to 175°C. Evaluate the forward voltage drop and reverse leakage current specifications against circuit efficiency needs. Confirm that the surge current rating meets the transient protection requirements of the application.
This part belongs to the 1N53xx series of axial leaded rectifier diodes manufactured by Central Semiconductor Corp. The series typically offers various voltage ratings while maintaining a consistent 1.5A average forward current capacity. The 'TR' suffix indicates tape and reel packaging, suitable for high-volume automated placement processes.
Equivalent parts include other manufacturers' 1N5311 variants such as those from Vishay or Diodes Inc., provided they meet the same 1.5A/100V specifications and DO-201AH package outline. Verify pin compatibility and electrical parameters before substitution.