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The 1N5312-1 is a field-effect current regulator diode manufactured by Microchip Technology. It provides a regulated current of 4.29 mA with a maximum voltage rating of 100 V and a power dissipation capability of 500 mW. The device utilizes an axial through-hole package, specifically DO-204AA (DO-7), designed for reliable surface mounting applications.
Verify the specific suffix designation to ensure compatibility with required packaging or qualification standards. Confirm that the axial leaded form factor aligns with the target PCB layout constraints. Cross-reference official datasheets for thermal derating curves and absolute maximum ratings prior to integration into final designs.
Select this component when a fixed current value near 4.29 mA is required within a 100 V operating range. Consider the 500 mW power dissipation limit relative to ambient temperature conditions. Ensure the axial package style fits the assembly process requirements compared to surface-mount alternatives.
This part belongs to the family of field-effect current regulator diodes, which maintain constant current over a wide voltage range. These devices serve as simple, cost-effective solutions for biasing and current limiting without complex active circuitry, differing from standard Zener diodes by their primary function of current stabilization rather than voltage reference.
Direct substitutes include other manufacturers' equivalents such as the 1N5312BK from Central Semiconductor or JANS1N5312UR-1 from Cobham, though package styles may vary between axial and MELF formats.