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The Central Semiconductor Corp 1N5313 TR PBFREE is a silicon field effect current regulator diode housed in a DO-35 package. It provides a nominal regulator current of 4.30 mA, with a minimum of 3.66 mA and a maximum of 4.95 mA at a test voltage of 25 V. The device features a peak operating voltage of 100 V and a power dissipation rating of 600 mW. Electrical characteristics include a minimum dynamic impedance of 0.245 MΩ and a minimum knee impedance of 0.014 MΩ. The limiting voltage is specified at 2.75 V when the current is 0.8 times the minimum regulator current.
Verify the specific ordering suffix to confirm compliance requirements. The PBFREE designation indicates lead-free plating options are available upon request by adding the appropriate suffix during procurement. Confirm that the reel packaging aligns with automated assembly needs. Ensure the component meets environmental regulations relevant to the target market before finalizing orders.
Select this component when a stable current regulation is required within the 100 V peak operating voltage limit. The DO-35 package suits through-hole mounting configurations. Evaluate the nominal 4.30 mA regulator current against circuit load requirements. Consider the thermal characteristics provided by the double plug case design for heat dissipation management in the application environment.
This part belongs to the 1N5283 through 1N5314 series of silicon current limiting diodes. The series utilizes silicon field effect technology to deliver consistent current regulation. These devices are designed to replace traditional resistor-based current limiting solutions, offering improved performance and compactness in electronic circuits.
Direct replacements within the same series include 1N5312 and 1N5314. Verify that alternative current regulator diodes from other manufacturers match the 4.30 mA nominal current and 100 V peak voltage specifications to ensure functional compatibility.