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The onsemi 1N5391 is a general-purpose silicon rectifier diode housed in the DO-15 axial lead package. It features a peak repetitive reverse voltage (VRRM) of 50 V and supports an average rectified forward current (IF(AV)) of 1.5 A at 75°C ambient temperature. The device exhibits a maximum non-repetitive peak forward surge current of 50 A for an 8.3 ms half-sine wave. Electrical characteristics include a forward voltage drop of 1.4 V at 1.5 A, a reverse leakage current of 5.0 µA at rated voltage and 25°C, and a total capacitance of 25 pF. Operating junction temperatures range from -55°C to +150°C.
Verify manufacturer authenticity through authorized channels to avoid counterfeit components. Confirm specific ordering suffixes match required environmental standards or packaging formats. Review datasheet revision history for updated electrical limits before finalizing designs. Ensure storage conditions adhere to specified temperature ranges to maintain component integrity prior to assembly.
Select this component when a 50 V blocking voltage is sufficient for the application circuit. Consider the DO-15 package size for through-hole mounting requirements. Evaluate thermal resistance parameters if operating near maximum current ratings. Compare against higher voltage variants within the 1N539x series if system voltages exceed 50 V.
This part belongs to the 1N5391 through 1N5399 family of general-purpose rectifiers. All members share identical current and surge capabilities while differing only in their peak repetitive reverse voltage ratings. The series utilizes a consistent DO-15 plastic encapsulation and diffused junction technology across all voltage grades.
Cross-reference with other manufacturers' 1N5391 equivalents ensuring identical DO-15 footprint and 50 V rating. Verify that substitute parts meet the same 1.5 A continuous current and 50 A surge specifications.