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The 1N5391G is a standard recovery rectifier manufactured by Taiwan Semiconductor Corporation. It features a maximum average forward rectified current of 1.5 A and a maximum repetitive peak reverse voltage of 50 V. The device utilizes a silicon planar junction structure housed in a DO-204AC (DO-15) axial leaded package. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 50 A at 8.3 ms, a typical reverse leakage current of 5.0 µA at rated voltage, and a maximum DC forward voltage drop of 1.4 V. The component supports a maximum operating junction temperature of 175 °C.
Verify the specific manufacturer lot code and RoHS compliance status directly with the supplier or authorized distributor before procurement. Confirm that the ordering suffix matches the required halogen-free packaging specifications. Ensure the component meets the intended thermal management requirements for the target application environment.
Select this component when a low-cost, general-purpose rectifier with a 50 V blocking voltage is required. The 1.5 A current rating suits moderate power applications where standard recovery speed is sufficient. Consider alternative packages if surface-mount technology is mandatory, as this part is exclusively available in an axial leaded form factor.
This device belongs to the 1N539xG series of silicon rectifiers produced by Taiwan Semiconductor. The series covers various voltage ratings from 50 V to 1000 V within the same physical DO-15 package outline. The 'G' suffix typically denotes the halogen-free green compound variant used in the plastic molding process.
Cross-reference with Vishay 1N5391GP-E3/54 or Diodes Incorporated 1N5391G for pin-compatible alternatives. Verify that substitute parts maintain identical forward voltage and reverse leakage specifications to ensure circuit performance parity.