SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The 1N5397G is a general-purpose silicon rectifier diode manufactured by Taiwan Semiconductor Corporation. It features a maximum average forward rectified current of 1.5 A and a repetitive peak reverse voltage of 600 V. The device utilizes a glass passivation junction for stability and is housed in the DO-204AC (DO-15) axial leaded package. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 50 A, a maximum DC reverse leakage current of 5 µA at rated voltage, and a standard recovery time of 2 µs. The component supports a wide operating junction temperature range from -65 °C to +175 °C.
Verify that the ordering part number explicitly includes the 'G' suffix to confirm compliance with RoHS and REACH regulations. Confirm the manufacturer is Taiwan Semiconductor Corporation to ensure correct specifications. Check datasheet revisions for any updates to mechanical dimensions or testing conditions before finalizing procurement documentation.
Select this component when a robust 600 V, 1.5 A rectifier is required for through-hole mounting. Ensure the application does not exceed the 50 A surge current limit during turn-on transients. Verify that the circuit operates within the specified -65 °C to +175 °C junction temperature range to maintain reliability and prevent premature failure.
This device belongs to the 1N539x series of high-reliability rectifiers. It shares the same physical package and current handling capabilities as other members of the family but is distinguished by its specific 600 V reverse voltage rating. The glass passivation technology differentiates it from epoxy-coated alternatives, offering superior environmental resistance for industrial applications.
Direct substitutes include Vishay 1N5397GP-E3/54 and Rectron 1N5397G. These alternatives share identical electrical ratings and DO-204AC packaging. Verify pinout orientation and thermal derating curves match the original design requirements before substitution.