1N5398GHB0G

Overview

The Taiwan Semiconductor 1N5398GHB0G is a standard rectifier diode from the 1N539xG series, rated for an average forward current of 1.5 A and a repetitive peak reverse voltage of 800 V. It utilizes glass passivated chip junctions to ensure high efficiency and low forward voltage drop. The device is housed in a DO-204AC (DO-15) package with pure tin plated leads. It supports a maximum junction temperature of 150 °C and offers a non-repetitive peak forward surge current capability of 50 A.

Feature Summary

• Glass passivated chip junction construction
• High efficiency with low forward voltage drop
• AEC-Q101 qualified automotive grade reliability
• RoHS compliant and halogen-free

Applications

• DC to DC converter circuits
• Switching mode power supplies
• General purpose rectification

Procurement Notes

Verify that the specific ordering code includes the 'H' suffix to confirm AEC-Q101 qualification status. Confirm the 'B0G' suffix matches the required packaging format, such as tape and reel or ammo box quantities. Ensure the component meets UL 94V-0 flammability ratings for your enclosure requirements.

Selection Notes

Select this component when an 800 V blocking voltage is required alongside a 1.5 A continuous current rating. The DO-204AC package provides adequate thermal dissipation for general applications. Consider the low leakage current characteristics for high-temperature environments up to 150 °C junction temperature.

Part Context

This part belongs to the 1N5391G through 1N5399G series of silicon rectifiers. The series covers reverse voltages from 50 V to 1000 V while maintaining a consistent 1.5 A forward current rating across all variants. The 1N5398G variant specifically targets the 800 V segment of this standardized product line.

Replacement Considerations

Cross-reference with other manufacturers offering 1N5398 equivalents in the DO-15 package. Verify that substitute parts meet the same 800 V reverse voltage and 1.5 A forward current specifications.