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The 1N5399GH is a silicon rectifier diode manufactured by Taiwan Semiconductor Corporation. It features an axial leaded DO-15 package and is rated for a maximum average forward rectified current of 1.5 A at 25°C. The device supports a maximum repetitive peak reverse voltage of 1000 V, making it suitable for high-voltage general-purpose applications. Key electrical characteristics include a non-repetitive peak forward surge current capability of 50 A and a maximum DC reverse voltage rating of 1000 V.
Verify the specific suffix GH against the manufacturer's official documentation to confirm exact material composition and compliance status. Ensure the ordering part number matches the required voltage and current ratings for the target application. Cross-reference datasheets from authorized distributors to validate manufacturing origin and quality certifications before procurement.
Select this component when a standard 1.5 A rectifier with a 1000 V reverse voltage rating is required. The DO-15 through-hole package facilitates manual or automated insertion into printed circuit boards. Consider thermal derating requirements if operating temperatures exceed standard ambient limits defined in the technical specifications.
This component belongs to the 1N539x series of general-purpose silicon rectifiers. The series covers a voltage range from 50 V to 1000 V, sharing common mechanical dimensions and current handling capabilities. The 1N5399 variant specifically denotes the highest voltage rating within this standard family line.
The maximum repetitive peak reverse voltage (VRRM) is 1000 V.
Yes, the device utilizes a glass passivated junction structure for enhanced reliability.