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The Diotec Semiconductor 1N5400 is a standard recovery rectifier diode housed in the DO-201 axial leaded package. It features a maximum average forward current of 3 A and a peak repetitive reverse voltage of 50 V. The device exhibits a forward voltage drop of less than 1.2 V at 3 A, with a leakage current below 5 µA at rated voltage. Peak forward surge current ratings are 180 A at 50 Hz and 200 A at 60 Hz. Operating temperatures range from -50°C to +175°C.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm compliance with environmental directives such as RoHS and REACH requirements before integration. Ensure ordering suffixes match exact packaging preferences. Validate that the specific batch meets required reliability grades for the intended commercial or industrial application environment.
Select this component when a 3 A continuous current rating and 50 V blocking voltage are required. Consider the 1.5 µs reverse recovery time for standard frequency applications. Evaluate thermal resistance parameters if operating near maximum ambient temperature limits. Compare against higher voltage variants within the same series if system requirements change.
This part belongs to the 1N5400 through 1N5408 series of silicon rectifiers manufactured by Diotec Semiconductor. The series shares identical electrical characteristics except for varying peak repetitive reverse voltage ratings. All devices utilize the same DO-201 package and offer comparable surge current capabilities and thermal performance profiles.
Cross-reference with other manufacturers' 1N5400 equivalents ensuring matching 3 A current and 50 V voltage ratings. Verify package compatibility and pinout alignment. Confirm equivalent reverse recovery times and thermal resistance values for direct substitution.