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The Comchip Technology 1N5400-G is a general-purpose silicon rectifier diode designed for through-hole mounting in the DO-27 (DO-201AD) axial package. It features a maximum average forward rectified current of 3 A and a peak repetitive reverse voltage of 50 V. The device supports a maximum non-repetitive peak forward surge current of 200 A. Electrical characteristics include a maximum forward voltage of 1 V at rated current and a reverse leakage current of 5 µA. It operates within a junction temperature range of -65 °C to +125 °C.
Verify the specific manufacturer part number against official datasheets to ensure compliance with required electrical ratings. Confirm RoHS status and packaging type, such as ammo pack or tape and reel, prior to ordering. Cross-reference specifications with equivalent components if supply chain constraints exist. Ensure the selected variant matches the intended thermal and voltage requirements of the target circuit design.
Select this component for applications requiring a robust 3 A rectifier with a 50 V blocking voltage. The DO-27 package suits through-hole PCB layouts. Consider the 200 A surge rating for circuits with high inrush currents. Verify that the 1 V forward voltage drop aligns with system efficiency targets. Ensure operating temperatures remain within the specified -65 °C to +125 °C range for reliable performance.
This diode belongs to the 1N5400 series of general-purpose plastic rectifiers. It shares the same physical footprint and current ratings as other variants in the family, differing primarily in reverse voltage capabilities. The 1N5400-G specifically denotes the 50 V version manufactured by Comchip Technology, utilizing standard silicon junction technology for general electronic applications.
Equivalent parts include Vishay 1N5400/71-E3 and generic 1N5400 devices from other manufacturers. Verify pinout compatibility and thermal dissipation characteristics when substituting.