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The onsemi 1N5400G is a silicon rectifier diode designed for general-purpose applications. It features a maximum average forward rectified current (If) of 3 A and a peak repetitive reverse voltage (Vrrm) of 50 V. The device utilizes a DO-201AD axial leaded package with two pins, suitable for through-hole mounting. Key electrical specifications include a maximum non-repetitive peak forward surge current (Ifsm) of 200 A, a maximum forward voltage (Vf) of 1 V, and a peak reverse current (Ir) of 50 μA. The operating temperature range extends from -65°C to +150°C.
Verify the specific suffix (e.g., G) against the manufacturer's datasheet to confirm RoHS compliance and exact electrical tolerances. Ensure the DO-201AD package dimensions match the target PCB footprint. Confirm that the 50 V rating aligns with the circuit's peak inverse voltage requirements before finalizing procurement.
Select this component when a 3 A continuous current rating and 50 V blocking voltage are required in an axial package. Compare Vf and Ir specifications against alternative manufacturers if thermal management or efficiency is critical. Verify that the 200 A surge rating meets the application's inrush current demands.
The 1N5400 series belongs to a family of standard recovery silicon rectifiers widely used in low-to-medium power electronics. The 'G' suffix typically indicates Green/RoHS-compliant manufacturing. This part serves as a fundamental discrete semiconductor component for AC-DC conversion and DC isolation tasks.
Cross-reference with other manufacturers' 1N5400 equivalents such as Vishay 1N5400/70-E3 or Diotec 1N5400. Verify pinout compatibility and ensure thermal and electrical ratings meet or exceed the original specifications.