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The 1N5400GHB0G is a standard silicon rectifier diode from the Taiwan Semiconductor 1N5400G series, housed in a DO-201AD package. It features a maximum average forward current (IF) of 3 A and a repetitive peak reverse voltage (VRRM) of 50 V. The device supports a surge peak forward current (IFSM) of 125 A and operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a typical forward voltage (VF) of 1.1 V at 3 A and a maximum reverse current (IR) of 5 µA at 25°C. The component utilizes a glass passivated chip junction for high reliability.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and qualification status. The 'H' suffix indicates AEC-Q101 qualification, while 'B0G' specifies bulk packaging details distinct from tape and reel options. Confirm RoHS compliance and halogen-free status requirements prior to procurement to ensure alignment with project specifications.
Select this component for applications requiring a 3 A continuous forward current rating and a 50 V reverse voltage blocking capability. The DO-201AD through-hole package is suitable for general-purpose designs where thermal resistance of 45 °C/W is acceptable. Consider the 1.1 V forward voltage drop for efficiency calculations in power conversion stages.
This part belongs to the 1N5400G series, which covers voltage ratings from 50 V to 1000 V across variants like 1N5401G through 1N5408G. All series members share identical mechanical dimensions and current ratings but differ in their peak reverse voltage specifications. The 1N5400G specifically denotes the lowest voltage variant in this standardized rectifier lineup.
Direct substitutes within the same series include 1N5401G through 1N5408G, provided the circuit voltage requirements align with their respective higher reverse voltage ratings. Cross-manufacturer equivalents must match the 3 A IF, 50 V VRRM, and DO-201AD package constraints.