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The 1N5401 is a silicon rectifier diode manufactured by SMC Diode Solutions, designed for general-purpose applications. It features a maximum average forward rectified current of 3 A and a maximum repetitive peak reverse voltage of 100 V. The device utilizes a DO-201AD axial through-hole package with isolated case connection. Key electrical characteristics include a non-repetitive peak forward surge current capability of 125 A and a junction temperature operating range from -55°C to 150°C.
Verify the manufacturer designation on the component marking against SMC Diode Solutions specifications. Confirm the package type is DO-201AD and the electrical ratings match the required 100 V reverse voltage and 3 A current parameters. Ensure compliance with RoHS directives if applicable to the assembly process.
Select this component when a robust, high-current axial diode is required for low-voltage AC-to-DC conversion. The 100 V rating provides sufficient margin for standard 50/60 Hz mains rectification. Consider thermal management requirements given the 3 A continuous current capacity and the specific thermal resistance characteristics of the DO-201AD package.
This part belongs to the standard 1N54xx series of silicon rectifiers, widely used in industrial and consumer electronics. It serves as a fundamental discrete semiconductor component for power conversion tasks. The DO-201AD package offers mechanical stability for through-hole mounting technologies commonly found in legacy and high-power designs.
Equivalent parts include 1N5401GHB0G from Taiwan Semiconductor. Verify pinout compatibility and ensure substitute components meet or exceed the 100 V reverse voltage and 3 A current ratings.