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The Diodes Incorporated 1N5401-B is a silicon rectifier diode housed in a DO-201AD axial leaded package. It provides a maximum average forward rectified current of 3.0 A and a peak repetitive reverse voltage of 100 V. The device supports a non-repetitive peak forward surge current of 200 A for an 8.3 ms half-sine wave. Electrical characteristics include a typical total capacitance of 50 pF at 1.0 MHz and a junction-to-ambient thermal resistance of 15 °C/W. Operating and storage temperatures range from -65 to +150 °C.
Verify the specific ordering suffix '-B' against official manufacturer documentation to confirm bulk packaging specifications. Confirm RoHS compliance status as defined in the datasheet notes. Ensure component authenticity through authorized distribution channels. Validate that the part meets all electrical parameters required by the target application design before procurement.
Select this component for applications requiring 100 V reverse blocking capability and 3.0 A continuous forward current. Consider the DO-201AD package for through-hole mounting requirements. Evaluate thermal management needs based on the specified junction-to-ambient thermal resistance. Verify compatibility with operating temperature ranges extending up to 150 °C.
This component belongs to the 1N5400-1N5408 series of 3.0 A rectifiers manufactured by Diodes Incorporated. The series offers various reverse voltage ratings from 50 V to 1000 V within the same mechanical footprint. The 1N5401 variant specifically targets 100 V applications. The datasheet indicates this series is not recommended for new designs, suggesting consideration of alternative modern solutions.
The datasheet explicitly recommends using the S3A-S3M Series as replacements for the 1N5400-1N5408 series.