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The Good-Ark Semiconductor 1N5401G is a silicon rectifier diode designed for general-purpose applications. It features a maximum average forward rectified current of 3A and a maximum repetitive peak reverse voltage of 100V. The device utilizes a DO-201AD axial through-hole package, ensuring robust mechanical stability for PCB mounting. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 200A and a maximum DC reverse leakage current of 5µA at 100V. The component operates within a junction temperature range of -55°C to +175°C, providing reliable performance in demanding thermal environments.
Verify the manufacturer designation on the component marking against Good-Ark Semiconductor specifications. Confirm the package type matches the required DO-201AD footprint. Ensure compliance with relevant environmental directives such as RoHS if applicable to the end product. Cross-reference datasheet parameters with system requirements before integration.
Select this component when a standard recovery rectifier with 3A continuous current capacity is required. The 100V reverse voltage rating suits low-voltage AC-to-DC conversion tasks. Consider the thermal management capabilities provided by the DO-201AD package for heat dissipation needs. Evaluate the forward voltage drop impact on overall circuit efficiency.
This part belongs to the 1N54xx series of silicon rectifier diodes, widely used in industrial and consumer electronics. The series offers various voltage ratings while maintaining consistent current handling capabilities. The 1N5401G specifically addresses applications requiring moderate reverse voltage blocking with high reliability.
Compatible substitutes include other manufacturers' 1N5401 variants meeting identical electrical specifications. Verify pinout compatibility and package dimensions before substitution. Ensure equivalent thermal and electrical ratings are maintained.