1N5401G

Overview

The 1N5401G is a standard recovery rectifier diode manufactured by Taiwan Semiconductor Corporation. It features a maximum average forward rectified current of 3A and a maximum repetitive peak reverse voltage of 100V. The device utilizes a DO-201AD axial through-hole package with a molded plastic epoxy body rated UL 94V-0 for flame retardancy. Electrical characteristics include a maximum DC blocking voltage of 100V, a peak forward surge current of 200A, and a typical forward voltage drop of 1.1V at 3A. The component supports a junction temperature range from -55°C to 150°C and exhibits a maximum reverse leakage current of 5µA at 100V.

Feature Summary

• Glass passivated junction construction ensures high reliability and stable performance under varying conditions.
• High surge current capability allows the device to withstand transient overload events without failure.
• Low forward voltage drop design contributes to improved overall circuit efficiency and reduced power loss.

Applications

• General-purpose rectification in low-power electronic circuits
• AC to DC conversion in bridge rectifier configurations
• Protection against reverse polarity in DC power supply inputs

Procurement Notes

Verify the specific ordering suffix to confirm packaging format, as variations exist between cut tape, reel, and bulk options. Confirm RoHS compliance status and lead times directly with the manufacturer or authorized distributors prior to finalizing procurement plans. Ensure the selected variant matches the required mechanical and electrical specifications for the target application environment.

Selection Notes

Select this component when a 3A current rating and 100V reverse voltage are required for general-purpose applications. Consider the DO-201AD package size for through-hole mounting constraints. Evaluate thermal management requirements based on the specified junction temperature limits and ambient operating conditions to ensure long-term reliability.

Part Context

This part belongs to the 1N540 series of silicon rectifiers produced by Taiwan Semiconductor. The 'G' suffix typically denotes Green (RoHS compliant) manufacturing. The series is designed for general-purpose use, offering a balance of current handling and voltage blocking capabilities suitable for various consumer and industrial electronics.

Replacement Considerations

Direct replacements include other manufacturers' 1N5401 variants such as those from Diotec or Comchip Technology. Verify that substitute parts match the 3A current rating, 100V reverse voltage, and DO-201AD package dimensions to ensure compatibility with existing PCB layouts and thermal profiles.

FAQ

What is the maximum repetitive peak reverse voltage for the 1N5401G?

The maximum repetitive peak reverse voltage (VRRM) is 100V.

Does the 1N5401G feature glass passivation?

Yes, the device utilizes a glass passivated junction for enhanced reliability and protection against chemical corrosion.

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current (IFSM) is 200A for an 8.3ms single half-sine wave.