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The Diotec Semiconductor 1N5402 is a silicon rectifier diode housed in the DO-201 axial plastic package. It features an average forward current rating of 3 A and a maximum repetitive peak reverse voltage of 200 V. The device supports a non-repetitive peak forward surge current of 180 A and maintains a low reverse leakage current of 5 µA at rated voltage. Operating within a junction temperature range of -50 °C to +175 °C, it exhibits a typical forward voltage drop of 1.2 V at full load.
Verify the specific suffix against the manufacturer's official datasheet to confirm compliance with RoHS directives and terminal plating specifications. Ensure the ordered part matches the required reverse voltage class, as the 1N540x series spans multiple voltage ratings. Confirm package dimensions align with PCB footprint requirements before finalizing procurement.
Select this component when a standard 3 A rectifier with a 200 V blocking capability is required. It serves as a direct replacement for legacy 1N5402 designs in general-purpose applications. Consider the high operating temperature limit for environments exceeding standard industrial ranges. Verify thermal management needs based on the continuous current rating and ambient conditions.
This diode belongs to the widely adopted 1N54xx family of general-purpose rectifiers. It shares mechanical and electrical characteristics with peers like the 1N5401 and 1N5404, differing primarily in its reverse voltage breakdown specification. The DO-201 package provides robust through-hole mounting suitable for high-current power electronics.
Equivalent parts include Vishay 1N5402-E3/66 and LRC 1N5402. Cross-reference datasheets to verify exact reverse voltage tolerance and forward voltage variations. Ensure substitute components maintain the same DO-201 axial lead configuration for mechanical compatibility.