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The Taiwan Semiconductor Corporation 1N5402G is a standard recovery rectifier diode designed for general-purpose applications. It features a maximum average forward rectified current of 3.0 A and a repetitive peak reverse voltage rating of 200 V. The device utilizes a DO-201AD axial leaded package with an isolated case configuration. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 200 A, a maximum DC reverse leakage current of 5 µA at rated voltage, and a maximum forward voltage drop of 1.0 V at full load. The component supports a junction temperature range from -65 °C to +150 °C.
Verify the specific suffix 'G' indicates RoHS compliance and halogen-free status according to the manufacturer's datasheet. Confirm the package type matches DO-201AD requirements for your PCB layout. Ensure the 200 V reverse voltage rating meets your circuit's peak inverse voltage demands. Check for availability as distribution status may vary by region.
Select this component when a 3 A continuous current rating and 200 V blocking voltage are required in a through-hole package. Compare against other 1N54xx series variants if different voltage ratings suit the application better. Verify thermal management needs for the DO-201AD package under high ambient temperatures. Consider the standard recovery speed for non-switching power applications.
This part belongs to the widely recognized 1N5400 series of silicon rectifiers. It shares the same physical footprint and current capabilities as other members like the 1N5401 or 1N5404, differing primarily in the reverse voltage breakdown specification. The series is established for robust, low-cost rectification in industrial and consumer electronics.
Direct substitutes include Vishay 1N5402-E3 and onsemi 1N5402G, which share identical electrical ratings and DO-201AD packaging. Cross-reference datasheets to confirm pinout polarity and mounting dimensions match before integration.