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The Diodes Incorporated 1N5402G-T is a glass-passivated silicon rectifier diode housed in a DO-201AD plastic package. It provides an average rectified output current of 3.0 A at 55°C and supports a peak repetitive reverse voltage of 200 V. The device features a maximum forward voltage of 1.1 V at 3.0 A, a non-repetitive peak forward surge current rating of 125 A, and a typical reverse recovery time of 2.0 μs. Operating temperatures range from -65°C to +150°C.
Verify the specific ordering suffix 'T' corresponds to the Tape & Reel packaging format containing 1.2K units per 13-inch reel. Confirm that the component meets EU RoHS 2 (2011/65/EU) compliance requirements and check for any applicable exemptions regarding halogen or antimony content before finalizing procurement specifications.
Select this component when a 200 V blocking voltage is required alongside a 3.0 A continuous current rating. Ensure the application environment accommodates the specified junction temperature range up to 150°C. Consider the 125 A surge capability for transient protection needs and verify that the through-hole DO-201AD package fits the target PCB layout constraints.
This part belongs to the 1N5400G through 1N5408G series of 3.0 A glass-passivated rectifiers manufactured by Diodes Incorporated. The series shares identical mechanical data and electrical characteristics except for the varying Peak Repetitive Reverse Voltage ratings, which range from 50 V to 1000 V across the family members.
Cross-reference with other manufacturers offering 1N5402 equivalents in the DO-201AD package. Verify that substitute parts match the 200 V reverse voltage, 3.0 A current rating, and 1.1 V forward voltage specifications to ensure circuit compatibility.