SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Comchip Technology 1N5402T-G is a silicon rectifier diode designed for general-purpose applications. It features a single configuration with an average forward current of 3A and a maximum repetitive peak reverse voltage of 200V. The device operates within a temperature range of -65°C to +125°C, supports a non-repetitive peak forward surge current of 200A, and utilizes the DO-27-2 through-hole package.
Verify the specific suffix 'T' against official manufacturer documentation to confirm tape-and-reel packaging status, as standard listings may indicate Ammo Pack. Ensure the selected component matches the required 200V rating and 3A current capacity for the target design. Cross-reference the RoHS compliance details directly from the datasheet before finalizing procurement orders.
Select this component when a 200V blocking capability is required alongside a 3A continuous current rating. The DO-27-2 package provides robust mechanical stability for through-hole assembly processes. Consider the thermal management requirements associated with the specified operating temperature range and forward voltage drop during circuit design.
This part belongs to the 1N540x series of rectifiers manufactured by Comchip Technology. It shares the same physical footprint and electrical current ratings as other variants in the family, differing primarily in its peak inverse voltage specification. The series is widely used in industrial and consumer electronics for basic power rectification tasks.
Compatible substitutes include the 1N5402 and 1N5402G from various manufacturers. Verify that replacement parts maintain the identical DO-27-2 package dimensions and meet or exceed the 200V reverse voltage and 3A forward current specifications.