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The 1N5404G-K is a silicon rectifier diode manufactured by Taiwan Semiconductor Corporation. It features a maximum repetitive peak reverse voltage of 400 V and an average forward rectified current of 3 A. The device utilizes a glass passivated junction for enhanced reliability and operates within a temperature range of -65 °C to +150 °C. Packaged in the DO-201AD (DO-27) axial lead format, it supports through-hole mounting. Key electrical characteristics include a low forward voltage drop and minimal reverse leakage current, ensuring efficient performance in standard recovery applications.
Verify that the specific suffix K corresponds to the intended packaging configuration, as standard datasheets often list Reel or Tape & Reel options without explicitly defining unique suffixes. Confirm RoHS compliance status directly with the manufacturer's latest documentation, as environmental declarations can vary by production batch. Ensure the DO-201AD package dimensions match your PCB footprint requirements before finalizing procurement orders.
Select this component when a robust 3 A rectifier with a 400 V blocking voltage is required for through-hole designs. The glass passivation makes it suitable for environments demanding higher stability compared to standard plastic-junction alternatives. Consider the thermal derating curves if operating near the maximum junction temperature limit of 150 °C to ensure long-term reliability in high-current scenarios.
This part belongs to the widely recognized 1N540x series of general-purpose silicon rectifiers. The 'G' suffix typically denotes glass passivation, while the 'K' suffix indicates specific packaging variations such as tape and reel formats. This series serves as a fundamental discrete semiconductor component across various industrial and consumer electronics sectors.
Direct substitutes include other manufacturers' 1N5404 variants, such as Vishay's 1N5404-E3/54 or Diotec's 1N5404. Verify that replacement parts maintain identical 400 V reverse voltage and 3 A forward current ratings. Ensure the alternative component also utilizes the DO-201AD package for mechanical compatibility.
The device is rated for a maximum non-repetitive surge current of 200 A at 8.3 ms single half-sine-wave superimposed on rated load per JEDEC methodology.
Yes, the glass passivated junction ensures very low reverse leakage current, specified as a maximum of 5 µA at 400 V.