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The 1N5406GH is a standard recovery rectifier diode manufactured by Taiwan Semiconductor Corporation. It features a maximum average forward rectified current of 3 A and a maximum repetitive peak reverse voltage of 600 V. The device utilizes a DO-201AD plastic package with axial leads for through-hole mounting. It is designed for general-purpose rectification applications, offering high forward surge capability and low leakage current characteristics suitable for power supply circuits.
Verify the specific suffix GH against official Taiwan Semiconductor documentation to confirm packaging details such as reel or cut tape configuration. Ensure the component matches the required DO-201AD form factor and electrical ratings for your design. Cross-reference the manufacturer part number with authorized distributors to confirm availability and authenticity before procurement.
Select this component when a 3 A current rating and 600 V blocking voltage are required in a standard through-hole package. Consider the DO-201AD footprint compatibility with existing PCB layouts. Evaluate thermal management requirements based on the 150 °C junction temperature limit and derating curves provided in the datasheet for capacitive loads.
This component belongs to the 1N540x series of general-purpose silicon rectifiers. It shares common electrical characteristics with other variants in the series, differentiated primarily by their reverse voltage ratings. The 1N5406 variant specifically targets 600 V applications within this family.
Compatible substitutes include Vishay 1N5406-E3/58 and generic equivalents from manufacturers like Wing Shing or Gulf Semiconductor, provided they meet the 3 A / 600 V specifications and DO-201AD package dimensions.