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The Comchip Technology 1N5406T-G is a standard recovery rectifier diode housed in the DO-210AD (SMA) surface-mount package. It features a maximum average forward rectified current of 3 A and a peak repetitive reverse voltage rating of 1 kV. The device supports a maximum non-repetitive peak forward surge current of 150 A. Electrical characteristics include a maximum forward voltage of 950 mV at 3 A and a maximum reverse leakage current of 5 uA. The component operates within a junction temperature range of -65 °C to +125 °C.
Verify the specific suffix against the manufacturer datasheet to confirm package type and electrical ratings, as variations exist within the product line. Ensure the ordering code matches the required DO-210AD form factor and lead availability constraints. Cross-reference RoHS compliance status directly with official documentation before integration into regulated assemblies.
Select this component when a 3 A current rating and 1 kV blocking voltage are required in a compact surface-mount footprint. Compare the 950 mV forward voltage drop against alternative packages like DO-201AD to evaluate thermal performance trade-offs. Confirm that the 150 A surge capability meets the specific circuit inrush requirements during startup conditions.
This part belongs to the 1N5408 series family, which encompasses silicon rectifiers with varying reverse voltage ratings but consistent 3 A forward current capabilities. The 'T' designation typically indicates tape-and-reel packaging, while the '-G' suffix denotes Green/RoHS-compliant manufacturing. This places the component within the broader category of industrial-grade plastic encapsulated rectifiers.
Direct substitutes include Vishay 1N5408T-E3/54 and Diodes Inc. 1N5408-HE3-54. Verify that replacement parts maintain the identical DO-210AD footprint and match the 1 kV reverse voltage specification to ensure functional compatibility.