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The Diodes Incorporated 1N5407-B is a silicon rectifier diode in the 1N5400-1N5408 series, housed in a DO-201AD case. It provides an average rectified output current of 3.0 A at 105°C and supports a peak repetitive reverse voltage of 800 V. The device features a non-repetitive peak forward surge current rating of 200 A for 8.3 ms single half sine-wave pulses. Electrical characteristics include a maximum forward voltage of 1.0 V at 3.0 A and a peak reverse current of 10 µA at 25°C. Operating and storage temperatures range from -65°C to +150°C.
Verify that the specific ordering suffix matches the required packaging configuration. The '-B' designation indicates bulk packaging containing 500 units per container. Confirm compliance requirements against the manufacturer's latest documentation, as this component is marked not recommended for new design. Ensure lead solderability meets MIL-STD-202 standards if applicable to your assembly process.
Select this component when a standard 800V rated rectifier is required for general-purpose applications. Consider the thermal resistance and derating curves for ambient temperature conditions exceeding 25°C. Evaluate the DO-201AD package dimensions against available PCB space. Note that alternative surface mount options are recommended for modern designs due to the legacy status of this through-hole series.
This part belongs to the 1N5400-1N5408 family of 3.0 A rectifiers manufactured by Diodes Incorporated. The series covers voltage ratings from 50 V to 1000 V. The document explicitly states this series is not recommended for new design and suggests using the S3A-S3M series instead. The 1N5407 variant specifically targets 800 V blocking requirements within this lineup.
The datasheet recommends using the S3A-S3M series as replacements. Verify pinout compatibility and electrical specifications before substitution.