1N5407-E3/54

Overview

The Vishay General Semiconductor 1N5407-E3/54 is a silicon rectifier diode in the DO-201AD package. It provides a maximum average forward rectified current of 3.0 A and a maximum repetitive peak reverse voltage of 800 V. The device supports a peak forward surge current of 200 A and maintains a maximum DC reverse current of 5.0 μA at rated blocking voltage. Operating junction temperatures range from -50 °C to +150 °C, with a typical thermal resistance of 20 °C/W.

Feature Summary

• Low forward voltage drop
• Low leakage current
• High forward surge capability

Applications

• General purpose rectification of power supplies
• Inverters
• Converters
• Freewheeling diodes application

Procurement Notes

Verify the specific ordering suffix /54 against official documentation to confirm reel packaging specifications. Confirm RoHS compliance status and material categorization details directly from the manufacturer datasheet before procurement. Ensure lead length requirements align with thermal derating curves for the intended operating environment.

Selection Notes

Select this component when an 800 V reverse voltage rating is required alongside a 3.0 A continuous forward current capacity. The DO-201AD through-hole package facilitates standard PCB mounting. Evaluate thermal management needs based on the specified 20 °C/W junction-to-ambient thermal resistance under defined lead length conditions.

Part Context

This part belongs to the 1N5400 series of general-purpose plastic rectifiers manufactured by Vishay. The series covers reverse voltage ratings from 50 V to 1000 V within the same mechanical form factor. The E3 suffix indicates matte tin-plated leads that are solderable per J-STD-002 standards.

Replacement Considerations

Cross-reference other manufacturers' 1N5407 equivalents or Vishay's 1N5407G variant. Verify identical electrical parameters, specifically the 800 V reverse voltage and 3.0 A forward current ratings, before substitution.