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The onsemi 1N5407G is a lead-mounted standard recovery rectifier featuring an axial-lead glass passivated junction. It provides a peak repetitive reverse voltage of 800 V and supports an average rectified forward current of 3.0 A under specified resistive load conditions. The device operates within a junction temperature range of -65 to +150 °C and withstands non-repetitive peak surge currents up to 200 A. Electrical characteristics include a maximum forward voltage drop of 1.0 V at 3.0 A, with thermal resistance values varying based on mounting method.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging format and quantity. Confirm that the component meets required environmental compliance standards such as RoHS and halogen-free specifications before finalizing procurement decisions.
Select this component when an 800 V blocking voltage and 3.0 A continuous current rating are required. Ensure the application environment remains within the specified -65 to +150 °C junction temperature range. Consider the thermal resistance characteristics relative to the intended PCB mounting method for adequate heat dissipation.
This part belongs to the 1N5400 through 1N5408 series of axial-lead standard recovery rectifiers manufactured by onsemi. The series utilizes a DO-201AD (Case 267-05) package style. These devices are designed as general-purpose silicon rectifiers suitable for various power conversion applications.
Compatible substitutes within the same series include the 1N5400G, 1N5401G, 1N5402G, 1N5404G, 1N5406G, and 1N5408G. Verify that the replacement part matches the required reverse voltage and current ratings for the specific circuit design.
The device can withstand a non-repetitive peak surge current of 200 A for one cycle of an 8 ms single half-sine-wave.
The cathode end is indicated by a polarity band printed on the epoxy molded case.