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The 1N5407G-K is a silicon rectifier diode manufactured by Taiwan Semiconductor Corporation. It features a maximum average forward rectified current of 3 A and a maximum repetitive peak reverse voltage of 800 V. The device utilizes a glass passivated chip junction within a DO-201AD axial leaded package. Electrical characteristics include a maximum non-repetitive peak forward surge current of 200 A at 60 Hz, a maximum DC reverse leakage current of 5 µA at rated voltage, and a maximum DC forward voltage drop of 1.1 V at 3 A. The component operates across a temperature range from -65 °C to +150 °C junction temperature.
Verify the specific suffix 'K' against official datasheets to confirm packaging or tape-and-reel specifications. Confirm RoHS compliance status and manufacturing origin. Ensure the supplier provides valid traceability documentation. Cross-reference the part number with the manufacturer's latest release notes to verify availability and any potential process changes.
Select this component for applications requiring standard recovery characteristics with high voltage blocking capability. The 800 V rating provides safety margin for mains-powered systems. The DO-201AD package suits through-hole mounting processes. Consider thermal management requirements based on the 3 A continuous current rating and ambient operating conditions.
This part belongs to the 1N540x series of general-purpose rectifiers. The series offers various voltage ratings from 50 V to 1000 V while maintaining consistent current handling. The 'G' suffix typically indicates RoHS compliance. The 'K' suffix may denote specific packaging variations such as tape and reel, distinct from standard bulk packaging.
Direct replacements include 1N5407, 1N5407-E3, and equivalent parts from other manufacturers meeting the 3 A / 800 V specification. Verify pinout compatibility and package dimensions before substitution.