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Product Detailed Parameters
- Description：DIODE STANDARD 800V 3A DO201AD
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：800 V
- Current - Average Rectified (Io)：3A
- Voltage - Forward (Vf) (Max) @ If：1 V @ 3 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：5 µA @ 800 V
- Capacitance @ Vr, F：25pF @ 4V, 1MHz
- Mounting Type：Through Hole
- Package / Case：DO-201AD, Axial
- Supplier Device Package：DO-201AD
- Operating Temperature - Junction：-55°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The 1N5407G is a silicon rectifier diode manufactured by Taiwan Semiconductor Corporation. It features a single-phase, one-element configuration housed in the DO-201AD axial leaded package. The device supports a maximum average forward rectified current of 3A and withstands a maximum repetitive peak reverse voltage of 800V. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 125A and a maximum forward voltage of 1V. The component operates within a junction temperature range of -65°C to 150°C.
Feature Summary
- Glass passivated chip junction for enhanced reliability
- High current capability with low forward voltage drop
- High surge current capability for robust performance
- Low power loss resulting in high efficiency
Applications
- General purpose rectification
- Efficiency optimization in power circuits
- High reliability applications requiring low power loss
Procurement Notes
Verify the specific manufacturer prefix or suffix on the packing code to confirm compliance status. Prefix 'H' indicates AEC-Q101 qualification. Suffix 'G' denotes halogen-free green compound packaging. Ensure the ordering information matches the required mechanical and environmental specifications before procurement.
Selection Notes
Select this component when an 800V reverse voltage rating and 3A continuous current are required in a through-hole axial package. Consider the glass passivation for improved stability. Verify thermal management requirements against the 150°C maximum junction temperature limit and ensure the DO-201AD footprint fits the design constraints.
Part Context
This part belongs to the 1N5400G through 1N5408G series of glass passivated rectifiers from Taiwan Semiconductor. The series shares common mechanical data including molded cases with UL flammability classification 94V-0 and matte tin plated leads. The 1N5407G specifically provides the 800V variant within this standardized lineup.
Replacement Considerations
Cross-reference with other manufacturers offering the standard 1N5407 specification. Verify that substitute parts match the 800V V(RRM), 3A I(O), and DO-201AD package dimensions. Confirm equivalent electrical parameters such as forward voltage and leakage current.
