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The 1N5407GH is a silicon rectifier diode manufactured by Taiwan Semiconductor Corporation. It features a maximum average forward rectified current of 3A and a maximum repetitive peak reverse voltage of 800V. The device utilizes a glass passivated chip junction for enhanced reliability and low leakage current. It is housed in a DO-201AD axial leaded package with an isolated case configuration. The component is designed for general-purpose rectification applications requiring high surge current capability and low power loss.
Verify the specific suffix 'H' on the packing code, as it indicates compliance with the JESD 201 class 1A whisker test. Confirm that the manufacturer is Taiwan Semiconductor Corporation to ensure the correct part family. Check for AEC-Q101 qualification status if automotive grade requirements are necessary. Ensure the DO-201AD package matches the board layout constraints.
Select this component when an 800V reverse voltage rating is required alongside a 3A continuous current capacity. The glass passivation offers superior stability compared to plastic encapsulated alternatives in harsh environments. Consider the thermal derating curves for capacitive loads. Verify that the axial lead spacing fits the target PCB footprint.
This part belongs to the 1N540x series of standard recovery rectifiers from Taiwan Semiconductor. The series covers voltage ratings from 50V to 1000V. The 'G' suffix typically denotes halogen-free molding compound, while 'H' adds whisker test compliance. This specific model provides the highest voltage rating in the common 3A axial package lineup.
Compatible substitutes include the 1N5407G from Vishay or Comchip Technology. Other manufacturers offering equivalent DO-201AD 3A 800V rectifiers may be used if electrical characteristics match. Verify pinout compatibility and thermal performance before substitution.